Datasheet > NLAS4783B

NLAS4783B

更新时间： 2024-09-13 03:46:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
10页	86K
描述
Triple SPDT 1.0 ohm RON Switch

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NLAS4783B 数据手册

NLAS4783B

Triple SPDT 1.0 W R_ON

Switch

The NLAS4783B is a triple independent low R

SPDT analog

switch with ENABLE. This device is designed for low operating

voltage, high current switching of speaker output for cell phone

applications. It can switch a balanced stereo output. The NLAS4783B

can handle a balanced microphone/speaker/ring−tone generator in a

monophone mode. The device contains a break−before−make feature.

http://onsemi.com

MARKING

DIAGRAM

Features

• Single Supply Operation

1.65 to 4.5 V V

NLAB

4783

ALYWG

Function Directly from LiON Battery

• Tiny 3 x 3 mm 16−Pin QFN Package

Meets JEDEC MO−220 Specifications

• Low Static Power

• OVT on Logic Address and Enable Inputs

• This is a Pb−Free Device*

QFN−16

CASE 485AE

= Assembly Location

= Wafer Lot

= Year

W = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Typical Applications

• Cell Phone Speaker/Microphone Switching

• Ringtone−Chip/Amplifier Switching

• Three Unbalanced (Single−Ended) Switches

• Stereo Balanced (Push−Pull) Switching

PIN CONNECTIONS

Y0 Y1 Vcc

Important Information

• ESD Protection:

Human Body Model (HBM) > 8000 V

Machine Model (MM) > 400 V

• Ringtone−Chip/Amplifier Switching

• Continuous Current Rating Through each Switch 300 mA

• Conforms to: JEDEC MO−220, Issue H, Variation VEED−6

• Pin−for−Pin Compatible with MAX4783

ENABLE

NC GND

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 0

NLAS4783B/D

12 3 4 5 6 7...10

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