NLAS5223L

更新时间： 2024-09-15 03:46:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管
页数	文件大小	规格书
11页	116K
描述
Ultra-Low 0.5 ohm Dual SPDT Analog Switch

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数据手册

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NLAS5223L 数据手册

NLAS5223, NLAS5223L

Ultra−Low 0.5 W

Dual SPDT Analog Switch

The NLAS5223 is an advanced CMOS analog switch fabricated in

Sub−micron silicon gate CMOS technology. The device is a dual

Independent Single Pole Double Throw (SPDT) switch featuring

Ultra−Low R of 0.5 ꢀ, at V = 3.0 $ 0.3 V.

The part also features guaranteed Break Before Make (BBM)

switching, assuring the switches never short the driver.

http://onsemi.com

MARKING

DIAGRAM

Features

• Ultra−Low R , t0.5 ꢀ at V = 3.0 $ 0.3 V

XXMG

WQFN−10

CASE 488AQ

• NLAS5223 Interfaces with 2.8 V Chipset

• NLAS5223L Interfaces with 1.8 V Chipset

• Single Supply Operation from 1.65−3.6 V

• Smallest 1.4 x 1.8 x 0.75 mm Thin QFN Package

= Specific Device Code

AU = NLAS5223

AV = NLAS5223L

= Date Code

• Full 0−V Signal Handling Capability

• High Off−Channel Isolation

• Low Standby Current, t50 nA

• Low Distortion

= Pb−Free Device

(Note: Microdot may be in either location)

• R Flatness of 0.15

ꢀ

GND

NC2

• High Continuous Current Capability

$300 mA Through Each Switch

• Large Current Clamping Diodes at Analog Inputs

$300 mA Continuous Current Capability

IN2

NC1

• ESD

Human Body Model > 2000 V

COM2

NO2

IN1

• These are Pb−Free Devices

COM1

Applications

• Cell Phone Audio Block

• Speaker and Earphone Switching

• Ring−Tone Chip / Amplifier Switching

• Modems

NO1

FUNCTION TABLE

NO 1, 2

IN 1, 2

NC 1, 2

OFF

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

Publication Order Number:

September, 2006 − Rev. 4

NLAS5223/D

12 3 4 5 6 7...11

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