Datasheet > NLAS4685/D

NLAS4685/D

更新时间： 2024-09-12 23:53:51

品牌	Logo	应用领域
其他 - ETC		开关
页数	文件大小	规格书
10页	81K
描述
Ultra-Low Resistance Dual Analog Switch

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数据手册

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NLAS4685/D 数据手册

NLAS4685

Ultra−Low Resistance

Dual SPDT Analog Switch

The NLAS4685 is an advanced CMOS analog switch fabricated in

Sub−micron silicon gate CMOS technology. The device is a dual

Independent Single Pole Double Throw (SPDT) switch featuring

http://onsemi.com

Ultra−Low R of 0.8 W, for the Normally Closed (NC) switch and

for the Normally Opened switch (NO) at 2.7 V.

The part also features guaranteed Break Before Make switching,

assuring the switches never short the driver.

MARKING

DIAGRAM

The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array,

with a 3 x 4 arrangement of solder bumps. The pitch of the solder

bumps is 0.5 mm for easy handling.

Features

Microbump−10

CASE 489AA

XX = Device Code

= Date Code

• Ultra−Low R , t0.8 W at 2.7 V

• Threshold Adjusted to Function with 1.8 V Control at

= 2.7−3.3 V

• Single Supply Operation from 1.8−5.5 V

• Tiny 2 x 1.5 mm Bumped Die

• Low Crosstalk, t 81 dB at 100 kHz

PIN CONNECTIONS

AND LOGIC DIAGRAM

(Top View)

GND

• Full 0−V Signal Handling Capability

• High Isolation, −65 dB at 100 kHz

• Low Standby Current, t50 nA

• Low Distortion, t0.14% THD

NC2

IN2

NC1

IN1

• R Flatness of 0.15

• Pin for Pin Replacement for MAX4685

Applications

COM2

NO2

COM1

NO1

• Cell Phone

• Speaker Switching

• Power Switching (Up to 100 mA)

• Modems

• Automotive

FUNCTION TABLE

IN 1, 2

NO 1, 2

NC 1, 2

OFF

ORDERING INFORMATION

Device

Package

Shipping

NLAS4685

Microbump−10 3000/Tape & Reel

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

July, 2003 − Rev. 0

NLAS4685/D

12 3 4 5 6 7...10

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