Datasheet > NLAS4717/D

NLAS4717/D

更新时间： 2024-11-19 23:53:51

品牌	Logo	应用领域
其他 - ETC		开关光电二极管
页数	文件大小	规格书
10页	82K
描述
Low Voltage Dual SPDT Analog Switch

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NLAS4717/D 数据手册

NLAS4717

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Low Voltage

Dual SPDT Analog Switch

The NLAS4717 is an advanced CMOS analog switch fabricated in

Sub−micron silicon gate CMOS technology. The device is a dual

Independent Single Pole Double Throw (SPDT) switch featuring two

http://onsemi.com

Low R of 4.5 W at 2.7 V.

The part also features guaranteed Break Before Make switching,

assuring the switches never short the driver.

MARKING

DIAGRAM

The NLAS4717 is available in a 2.0 x 1.5 mm bumped die array,

with a 4 x 3 arrangement of solder bumps. The pitch of the solder

bumps is 0.5 mm for easy handling.

Microbump−10

CASE 489AA

Features

XX = Device Code

D = Date Code

• Low R , t4.5 W at 2.7 V

• Threshold Adjusted to Function with 1.8 V Control at

Supply = 2.7−3.3 V

• Single Supply Operation from 1.8−5.5 V

• Tiny 2.0 x 1.5 mm Bumped Die

• Low Crosstalk, t−80 dB at 10 mHz

PIN CONNECTIONS

AND LOGIC DIAGRAM

(Top View)

GND

• Full 0−V Signal Handling Capability

• High Isolation, −55 dB at 10 mHz

• Low Standby Current, t50 nA

• Low Distortion, t0.03% THD

NC2

IN2

NC1

IN1

• R Flatness of 1.2

• Pin for Pin Replacement for MAX4717

COM2

NO2

COM1

NO1

Applications

• Cell Phone

• Speaker Switching

• Power Switching (Up to 100 mA)

• Modems

V+

• Automotive

FUNCTION TABLE

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

IN 1, 2

NO 1, 2

NC 1, 2

OFF

ORDERING INFORMATION

Device

Package

Shipping

NLAS4717

Microbump−10 3000/Tape & Reel

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

July, 2003 − Rev. P0

NLAS4717/D

12 3 4 5 6 7...10

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