Datasheet > NE721S01-T1B

NE721S01-T1B

更新时间： 2024-11-22 22:10:55

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
5页	36K
描述
GENERAL PURPOSE L TO X-BAND GaAs MESFET

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NE721S01-T1B 数据手册

GENERAL PURPOSE

L TO X-BAND GaAs MESFET

NE721S01

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

HIGH POWER GAIN:

7 dB TYP at 12 GHz

PACKAGE OUTLINE S01

•

HIGH OUTPUT POWER:

2.0 ± 0.2

15 dBm TYP at 12 GHz

•

LG = 0.8 µm, WG = 330 µm

LOW PHASE NOISE:

-110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz

•

LOW COST PLASTIC PACKAGE

DESCRIPTION

1. Source

2. Drain

3. Source

4. Gate

The NE721S01 is a low cost 0.8 µm recessed gate GaAs

MESFET, suitable for both amplifier and oscillator applica-

tions. Larger gate geometry make this device ideal for second

and third stages of low noise amplifiers operating in the 1-12

GHz frequency range. The NE721S01 is fabricated with an

epitaxial process resulting in excellent phase noise in oscilla-

tor applications up to 14 GHz. NEC's latest high performance/

low cost plastic packaging technology make the NE721S01

suitable for GPS, TVRO, DBS, PRD and other commercial

applications.

0.65 TYP.

1.9 ± 0.2

1.6

Part Number

Designator (Letter).

When the letter is

upright, the gate lead

is to the right.

0.125 ± 0.05

0.4 MAX

4.0 ± 0.2

ORDERING INFORMATION

PART NUMBER

QTY

PACKAGE

LEAD

LENGTH

NE721S01-T1

NE721S01

1K/Reel

Bulk up to 4K

4K/Reel

S01

1.0 mm

NE721S01-T1B

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE721S01

S01

SYMBOL

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset

Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz

dBc/Hz

-110

7.0

P1dB

Output Power at 1 dB Gain Compression Point, f = 12 GHz

VDS = 3 V, IDS = 30 mA

dBm

15.0

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0

Pinch Off Voltage at VDS = 3 V, ID = 100 µA

Transconductance at VDS = 3 V, ID = 10 mA

Gate to Source Leak Current at VGS = -5 V

Thermal Resistance

-4.0

100

-0.5

-2.0

µA

IGSO

RTH

1.0

°C/W

300

California Eastern Laboratories

12 3 4 5

中文翻译

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与NE721S01-T1B相关器件

型号	品牌	获取价格	描述	数据表
NE721S01-T1BM	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE721S01-T1BN	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE721S01-T1K	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE721S01-T1N	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE72218	NEC	获取价格	C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NE72218-57	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE72218-58	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE72218-59	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
NE72218-T1	NEC	获取价格	C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NE72218-T1-57	NEC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M

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