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NE721S01-T1B PDF预览

NE721S01-T1B

更新时间： 2024-02-19 22:32:52
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
5页 36K
描述
GENERAL PURPOSE L TO X-BAND GaAs MESFET

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中文翻译

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NE721S01-T1B 技术参数

生命周期：Obsolete包装说明：DISK BUTTON, O-PRDB-F4
针数：4Reach Compliance Code：unknown
HTS代码：8541.21.00.75风险等级：5.84
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：5 VFET 技术：METAL SEMICONDUCTOR
最高频带：X BANDJESD-30 代码：O-PRDB-F4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：DISK BUTTON
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：RADIAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

NE721S01-T1B 数据手册

 浏览型号NE721S01-T1B的Datasheet PDF文件第2页浏览型号NE721S01-T1B的Datasheet PDF文件第3页浏览型号NE721S01-T1B的Datasheet PDF文件第4页浏览型号NE721S01-T1B的Datasheet PDF文件第5页 
GENERAL PURPOSE  
L TO X-BAND GaAs MESFET  
NE721S01  
FEATURES  
OUTLINE DIMENSIONS (Units in mm)  
•
HIGH POWER GAIN:  
7 dB TYP at 12 GHz  
PACKAGE OUTLINE S01  
•
HIGH OUTPUT POWER:  
2.0 ± 0.2  
15 dBm TYP at 12 GHz  
•
•
LG = 0.8 µm, WG = 330 µm  
1
LOW PHASE NOISE:  
-110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz  
2
•
LOW COST PLASTIC PACKAGE  
J
4
DESCRIPTION  
1. Source  
2. Drain  
3. Source  
4. Gate  
3
The NE721S01 is a low cost 0.8 µm recessed gate GaAs  
MESFET, suitable for both amplifier and oscillator applica-  
tions. Larger gate geometry make this device ideal for second  
and third stages of low noise amplifiers operating in the 1-12  
GHz frequency range. The NE721S01 is fabricated with an  
epitaxial process resulting in excellent phase noise in oscilla-  
tor applications up to 14 GHz. NEC's latest high performance/  
low cost plastic packaging technology make the NE721S01  
suitable for GPS, TVRO, DBS, PRD and other commercial  
applications.  
0.65 TYP.  
1.9 ± 0.2  
1.6  
Part Number  
Designator (Letter).  
When the letter is  
upright, the gate lead  
is to the right.  
0.125 ± 0.05  
0.4 MAX  
4.0 ± 0.2  
ORDERING INFORMATION  
PART NUMBER  
QTY  
PACKAGE  
LEAD  
LENGTH  
NE721S01-T1  
NE721S01  
1K/Reel  
Bulk up to 4K  
4K/Reel  
S01  
S01  
S01  
1.0 mm  
1.0 mm  
1.0 mm  
NE721S01-T1B  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE721S01  
S01  
SYMBOL  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
PN  
GS  
Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset  
Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz  
dBc/Hz  
dB  
-110  
7.0  
P1dB  
Output Power at 1 dB Gain Compression Point, f = 12 GHz  
VDS = 3 V, IDS = 30 mA  
dBm  
mA  
V
15.0  
60  
IDSS  
VP  
Saturated Drain Current at VDS = 3 V, VGS = 0  
Pinch Off Voltage at VDS = 3 V, ID = 100 µA  
Transconductance at VDS = 3 V, ID = 10 mA  
Gate to Source Leak Current at VGS = -5 V  
Thermal Resistance  
30  
-4.0  
20  
100  
-0.5  
-2.0  
40  
gm  
mS  
µA  
IGSO  
RTH  
1.0  
10  
°C/W  
300  
California Eastern Laboratories  
12345

中文翻译

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