Datasheet > NE72218-T1-57

NE72218-T1-57

更新时间： 2024-11-24 06:07:39

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	60K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4

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中文翻译

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数据手册

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NE72218-T1-57 数据手册

DATA SHEET

GaAs MES FET

NE72218

C to X BAND AMPLIFIER

C to X BAND OSC

N-CHANNEL GaAs MES FET

FEATURES

•

High power gain in C to X band: G^S= 4.5 dB TYP. @ f = 12 GHz

Gate length

: L^g= 0.8 µm

: W^g= 400 µm

Gate width

4-pin super minimold package

Tape & reel packaging only available

ORDERING INFORMATION

Part Number

Package

4-pin super minimold

Supplying Form

• 8 mm wide embossed taping

NE72218-T1

NE72218-T2

• Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape

• Qty 3 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order:

NE72218).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Symbol

V^DS

V^GS

I^D

Ratings

5.0

Unit

−5.0

I^DSS

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

P^tot

250

T^ch

125

T^stg

−65 to +125

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P12750EJ3V0DS00 (3rd edition)

Date Published August 2000 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1997, 2000

12 3 4 5 6 7...12

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