NE722S01-T1-A

更新时间： 2024-10-02 13:00:11

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管射频小信号场效应晶体管放大器
页数	文件大小	规格书
6页	130K
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NE722S01-T1-A 数据手册

NEC's C TO X BAND

N-CHANNEL GaAs MES FET

NE722S01

OUTLINE DIMENSION (Units in mm)

FEATURES

• HIGH POWER GAIN:

GS = 6 dB TYP at f = 12 GHz

PACKAGE OUTLINE SO1

• OUTPUT POWER (at 1 dB compression):

2.0 0.2

15 dB TYP at f = 12 GHz

• LOW NOISE/HIGH GAIN:

NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz

2.0 0.2

• GATE LENGTH: LG = 0.8 µm (recessed gate)

• GATE WIDTH: WG = 400 µm

0.5

DESCRIPTION

TYP

2.0 0.2

NEC's NE722S01 is a low cost GaAs MESFET suitable for

both amplifier and oscillator applications through X-band.

The device features a 0.8 micron recessed gate, triple

epitaxial technology and is fabricated using ion implantation

for improved RF and DC performance and uniformity. This

device's low phase noise and high fT makes it a excellent

choice for oscillator applications on a digital LNB (Low

Noise Block). The NE722S01 is housed in a low cost plastic

package which is available in Tape and Reel.

1. Source

2. Drain

3. Source

4. Gate

0.65 TYP

1.9 0.2

1.6

NEC's stringent quality assurance and test procedures

ensure the highest reliability performance.

0.125 0.05

1.5 MAX

APPLICATIONS

0.4 MAX

4.0 0.2

• C to X band low noise amplifiers

• C to X band oscillators

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

NE722S01

S01

SYMBOLS

IGSO

PARAMETERS AND CONDITIONS

Gate to Source Leak Current, VGS = -5 V

UNITS

MIN

TYP

1.0

MAX

–

-0.5

–

IDSS

Saturated Drain Current, VDS = 3 V, VGS = 0 V

Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 µA

Transconductance, VDS = 3 V, IDS = 30 mA

Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz

120

-4.0

–

VGS

–

P1dB

Output Power at 1 dB Gain Compression Point at

VDS = 3 V, IDS = 30 mA, f = 12 GHz

dBm

15.0

Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz

Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz

–

0.9

–

California Eastern Laboratories

12 3 4 5 6

中文翻译

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