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NE73435 PDF预览

NE73435

更新时间： 2024-11-19 22:29:07
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
5页 42K
描述
NPN SILICON GENERAL PURPOSE TRANSISTOR

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中文翻译

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NE73435 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
其他特性：LOW NOISE, HIGH RELIABILITY最大集电极电流 (IC)：0.05 A
基于收集器的最大容量：1.5 pF集电极-发射极最大电压：14 V
配置：SINGLE最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：X-CXMW-F4元件数量：1
端子数量：4封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：UNSPECIFIED封装形式：MICROWAVE
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：UNSPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：3000 MHz
Base Number Matches：1

NE73435 数据手册

 浏览型号NE73435的Datasheet PDF文件第2页浏览型号NE73435的Datasheet PDF文件第3页浏览型号NE73435的Datasheet PDF文件第4页浏览型号NE73435的Datasheet PDF文件第5页 
NPN SILICON GENERAL  
PURPOSE TRANSISTOR  
NE734  
SERIES  
FEATURES  
• LOW NOISE FIGURE: < 3 dB at 500 MHz  
• HIGH GAIN: 15 dB at 500 MHz  
• HIGH GAIN BANDWIDTH PRODUCT: 2 GHz  
(3 GHz for the NE73435)  
• SMALL COLLECTOR CAPACITANCE: 1 pF  
• HIGH RELIABILITY METALLIZATION  
35 (MICRO-X)  
30 (SOT 323 STYLE)  
DESCRIPTION  
NE73433 is in the plastic Mini-Mold package designed for  
high-speed automated assembly operations for large volume  
hybrid ICs. For hybrid MIC applications requiring more perfor-  
mance, the NE73435 is recommended. This device is pack-  
agedintheeconomicalmetal-ceramic,hermeticMicro-Xpack-  
age.  
The NE734 series of NPN silicon general purpose UHF tran-  
sistors provide the designer with a wide selection of reliable  
transistors for high speed logic and wide-band low noise  
amplifier applications. The series uses NEC's highly reliable  
platinum-silicide, titanium, platinum, and gold metallization  
system to assure uniform performance and reliability. The  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
EIAJ1 REGISTERED NUMBER  
PACKAGE OUTLINE  
NE73430  
2SC4185  
30  
NE73435  
2SC2148  
35  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
MIN  
TYP  
MAX  
fT  
Gain Bandwidth Product at  
VCE = 10 V, IC = 10 mA  
VCE = 10 V, IC = 5 mA  
GHz  
GHz  
1.5  
3.0  
2.3  
NFMIN  
MAG  
Minimum Noise Figure2 at  
VCE = 10 V, IC = 3 mA, f = 0.5 GHz  
VCE = 10 V, IC = 5 mA, f = 0.9 GHz  
Maximum Available Gain3 at  
VCE = 10 V, IC = 10 mA,  
dB  
dB  
2.1  
3.5  
4.0  
17  
f = 0.5 GHz  
f = 1 GHz  
dB  
dB  
18  
13  
|S21E|2  
Insertion Power Gain at VCE = 10 V, IC = 10 mA,  
f = 0.5 GHz  
f = 1 GHz  
dB  
dB  
16  
9
8
8
hFE  
Forward Current Gain Ratio at  
VCE = 10 V, IC = 10 mA  
VCE = 10 V, IC = 5 mA  
25  
100  
.55  
200  
40  
100  
180  
0.1  
ICBO  
IEBO  
CCB  
Collector Cutoff Current at VCB = 15 V, IE = 0  
Emitter Cutoff Current at VEB = 2 V, IC = 0  
µA  
µA  
0.1  
0.1  
Collector to Base Capacitance4 at  
VCB = 10 V, IC = 0 mA, f = 1 MHz  
pF  
1.5  
0.75  
150  
833  
1.5  
250  
550  
PT  
Total Power Dissipation  
mW  
RTH  
Thermal Resistance (Junction to Case)  
°C/W  
Notes:  
1. Electronic Industrial Association of Japan.  
2. Input and output are tuned for optimum noise figures.  
3. Maximum Available Gain (MAG) is calculated  
2
1 + | ∆ |2 - |S11  
|
2 - |S22  
|
|S21  
|
K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used.  
∆ = S11  
,
S22 - S21 S12  
|S21  
|
|
(K ±  
MAG =  
MSG =  
, K =  
|S12  
|
|S12  
2 |S12  
S21|  
4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the  
guard terminal.  
California Eastern Laboratories  
12345

中文翻译

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