是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, SUPERMINI-4 | Reach Compliance Code: | compliant |
风险等级: | 5.63 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 5 V |
FET 技术: | METAL SEMICONDUCTOR | 最高频带: | X BAND |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE72218-57 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-58 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-59 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-T1 | NEC |
获取价格 |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
![]() |
NE72218-T1-57 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-T1-58 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-T1-59 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |
NE72218-T1-A | NEC |
获取价格 |
暂无描述 |
![]() |
NE72218-T2 | NEC |
获取价格 |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
![]() |
NE72218-T2-57 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |
![]() |