生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-PRDB-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 5 V | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | X BAND | JESD-30 代码: | O-PRDB-F4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE721S01-T1K | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE721S01-T1N | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218 | NEC |
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C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET | |
NE72218-57 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218-58 | NEC |
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218-59 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218-T1 | NEC |
获取价格 |
C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET | |
NE72218-T1-57 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218-T1-58 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M | |
NE72218-T1-59 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M |