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NE721S01-T1BN PDF预览

NE721S01-T1BN

更新时间: 2024-11-19 21:13:03
品牌 Logo 应用领域
日电电子 - NEC 放大器晶体管
页数 文件大小 规格书
12页 173K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4

NE721S01-T1BN 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-F4
针数:4Reach Compliance Code:unknown
HTS代码:8541.21.00.75风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:5 VFET 技术:METAL SEMICONDUCTOR
最高频带:X BANDJESD-30 代码:O-PRDB-F4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

NE721S01-T1BN 数据手册

 浏览型号NE721S01-T1BN的Datasheet PDF文件第2页浏览型号NE721S01-T1BN的Datasheet PDF文件第3页浏览型号NE721S01-T1BN的Datasheet PDF文件第4页浏览型号NE721S01-T1BN的Datasheet PDF文件第5页浏览型号NE721S01-T1BN的Datasheet PDF文件第6页浏览型号NE721S01-T1BN的Datasheet PDF文件第7页 

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