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NDS9956

更新时间: 2024-09-26 22:45:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管光电二极管
页数 文件大小 规格书
10页 342K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

NDS9956 数据手册

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February 1996  
NDS9956A  
Dual N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
3.7A, 30V. RDS(ON) = 0.08W @ VGS = 10V  
High density cell design for extremely low RDS(ON)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state resistance,  
provide superior switching performance, and withstand high  
energy pulses in the avalanche and commutation modes.  
These devices are particularly suited for low voltage  
applications such as DC/DC conversion and DC motor  
control where fast switching, low in-line power loss, and  
resistance to transients are needed.  
.
High power and current handling capability in a widely used  
surface mount package.  
Dual MOSFET in surface mount package.  
________________________________________________________________________________  
4
3
2
1
5
6
7
8
Absolute Maximum Ratings  
TA= 25°C unless otherwise noted  
Symbol Parameter  
NDS9956A  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
30  
V
V
A
VDSS  
VGSS  
ID  
± 20  
± 3.7  
± 15  
2
(Note 1a)  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
W
PD  
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
1
0.9  
Operating and Storage Temperature Range  
-55 to 150  
°C  
TJ,TSTG  
THERMAL CHARACTERISTICS  
Thermal Resistance, Junction-to-Ambient (Note 1a)  
78  
40  
°C/W  
°C/W  
R
JA  
q
Thermal Resistance, Junction-to-Case  
(Note 1)  
R
JC  
q
© 1997 Fairchild Semiconductor Corporation  
NDS9956A.SAM  

NDS9956 替代型号

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