Datasheet > NDS9956AL86Z

NDS9956AL86Z

更新时间： 2024-09-29 08:59:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	209K
描述
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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NDS9956AL86Z 数据手册

February 1996

NDS9956A

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

3.7A, 30V. R_DS(ON)= 0.08W @ V_GS= 10V

High density cell design for extremely low R_DS(ON)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance,

provide superior switching performance, and withstand high

energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage

applications such as DC/DC conversion and DC motor

control where fast switching, low in-line power loss, and

resistance to transients are needed.

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

NDS9956A

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

V_DSS

V_GSS

I_D

± 20

± 3.7

± 15

(Note 1a)

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

P_D

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

NDS9956A.SAM

12 3 4 5 6 7

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