Datasheet > NDS9959

NDS9959

更新时间： 2024-09-28 20:26:31

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
7页	209K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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NDS9959 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.73	Is Samacsys：	N
Base Number Matches：	1

NDS9959 数据手册

February 1996

NDS9959

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as DC motor control and DC/DC conversion where fast

switching, low in-line power loss, and resistance to transients

are needed.

2.0A, 50V. R_DS(ON)= 0.3W @ V_GS= 10V

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Dual MOSFET in surface mount package.

_________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

NDS9959

Units

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

I_D

± 20

Drain Current - Continuous @ T_A= 25°C

- Continuous @ T_A= 70°C

(Note 1a)

± 2.0

± 1.6

- Pulsed

@ T_A= 25°C

± 8

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

0.9

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDS9959.SAM

12 3 4 5 6 7

中文翻译

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与NDS9959相关器件

型号	品牌	获取价格	描述	数据表
NDS9959/D84Z	TI	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
NDS9959/L86Z	TI	获取价格	2A, 50V, 0.3ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
NDS9959/L99Z	TI	获取价格	2000mA, 50V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
NDS9959_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
NDS9959F011	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
NDS9959L86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
NDS9959L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
NDS9959S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-
NDSC1	ETC	获取价格	2.0mm 4 Pin Ceramic Surface Mount Crystal
NDSC1-8.000MHZ	CALIBER	获取价格	Series - Fundamental Quartz Crystal, 8MHz Nom, SMD, 4 PIN