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NDS9410 PDF预览

NDS9410

更新时间: 2024-11-14 22:45:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 232K
描述
Single N-Channel Enhancement Mode Field Effect Transistor

NDS9410 数据手册

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April 2000  
NDS9410A  
Single N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
This N-Channel Logic Level MOSFET is produced  
7.3 A, 30 V.  
RDS(ON) = 28 m@ VGS = 10 V  
RDS(ON) = 42 m@ VGS = 4.5 V  
using  
Fairchild  
Semiconductor’s  
advanced  
PowerTrench process that has been especially tailored  
to minimize the on-state resistance and yet maintain  
superior switching performance.  
High performance trench technology for extremely  
low RDS(ON)  
These devices are particularly suited for low voltage  
applications such as notebook computer power  
management and other battery powered circuits where  
fast switching, low in-line power loss and resistance to  
transients are needed.  
High power and current handling capability in a  
widely used surface mount package.  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
7.3  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
20  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
PD  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
NDS9410A  
NDS9410A  
13’’  
12mm  
2500 units  
NDS9410A Rev B(W)  
2000 Fairchild Semiconductor Corporation  

NDS9410 替代型号

型号 品牌 替代类型 描述 数据表
BSO220N03MSG INFINEON

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