Datasheet > NDS9410SD84Z

NDS9410SD84Z

更新时间： 2024-09-29 05:02:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	329K
描述
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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NDS9410SD84Z 数据手册

February 1997

NDS9410S

Single N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

SO-8 N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

7.0 A, 30 V. R_DS(ON)= 0.03 W @ V_GS= 10 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

____________________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS T_A= 25°C unless otherwise noted

Symbol Parameter

NDS9410S

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current - Continuous

- Pulsed

(Note 1a)

2.5

Maximum Power Dissipation

(Note 1a)

(Note 1b)

P_D

1.2

(Note 1c)

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

°C/W

NDS9410S Rev.B

12 3 4 5 6 7...10

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