生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
雪崩能效等级(Eas): | 550 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 800 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 150 W |
最大脉冲漏极电流 (IDM): | 225 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 280 ns |
最大开启时间(吨): | 430 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP7060_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
NDP7060J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7060L | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP7060L | TI |
获取价格 |
75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP7060L/J69Z | TI |
获取价格 |
75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP7060LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7060LS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta | |
NDP7060S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7061 | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP7061L | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |