生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | Is Samacsys: | N |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 550 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.015 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 225 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP7060LS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta | |
NDP7060S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7061 | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP7061L | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP7061L | TI |
获取价格 |
60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP7061L/J69Z | TI |
获取价格 |
60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP7061LJ69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7061LS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
NDP7061S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 64A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met | |
NDP706A | TI |
获取价格 |
75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |