是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
Is Samacsys: | N | 配置: | SINGLE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (Abs) (ID): | 54 A |
最大漏极电流 (ID): | 52 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP708BE | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP708BE | TI |
获取价格 |
52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP708BEL | TI |
获取价格 |
52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP708BES62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 54A I(D), 80V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
NDP710A | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP710AE | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP710AEL | TI |
获取价格 |
42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP710AES62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me | |
NDP710AL | TI |
获取价格 |
42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP710AS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me |