NDPL070N10B
Power MOSFET
100V, 10.8mΩ, 70A, N-Channel
This N-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and ultra low on resistance. This device is suitable for applications with
low gate charge driving or ultra low on resistance requirements.
www.onsemi.com
Features
Low On-Resistance
Low Gate Charge
High Speed Switching
100% Avalanche Tested
Pb-Free and RoHS compliance
V
R
(on) Max
I
DSS
DS
D Max
70A
10.8 mΩ@15V
12.8 mΩ@10V
100V
ELECTRICAL CONNECTION
N-Channel
Applications
D(2)
Battery Protection
Motor Drive
Primary Side Switch
Secondary Side Synchronous Rectification
G(1)
SPECIFICATION
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
S(3)
Parameter
Drain to Source Voltage
Symbol
Value
100
Unit
V
V
DSS
GSS
MARKING
Gate to Source Voltage
Drain Current (DC)
V
±20
70
V
I
A
D
Drain Current (Pulse)
PW10s, duty cycle1%
Power Dissipation
Tc=25C
I
280
DP
A
2.1
72
P
070N10
D
W
C
C
A
Tj
175
Junction Temperature
LOT No.
B
Tstg
55 to +175
TO-220-3L
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) (Note 2)
I
70
82
S
E
mJ
AS
Lead Temperature for Soldering
T
L
260
C
Purposes, 3mm from Case for 10 Seconds
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
2 : V =48V, L=100H, I =30A (Fig.1)
DD AV
Thermal Resistance Ratings
Parameter
Symbol
Value
2.08
71.4
Unit
Junction to Case Steady State
Junction to Ambient (Note 3)
Note 3 : Insertion mounted
R
JC
JA
C/W
R
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 0
1
Publication Order Number :
NDPL070N10B/D