Datasheet > NDPL070N10BG

NDPL070N10BG

更新时间： 2024-11-26 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	394K
描述
N-Channel Power MOSFET

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NDPL070N10BG 数据手册

NDPL070N10B

Power MOSFET

100V, 10.8mΩ, 70A, N-Channel

This N-Channel Power MOSFET is produced using ON Semiconductor’s

trench technology, which is specifically designed to minimize gate charge

and ultra low on resistance. This device is suitable for applications with

low gate charge driving or ultra low on resistance requirements.

www.onsemi.com

Features

 Low On-Resistance

 Low Gate Charge

 High Speed Switching

 100% Avalanche Tested

 Pb-Free and RoHS compliance

(on) Max

DSS

D Max

70A

10.8 mΩ@15V

12.8 mΩ@10V

100V

ELECTRICAL CONNECTION

N-Channel

Applications

D(2)

 Battery Protection

 Motor Drive

 Primary Side Switch

 Secondary Side Synchronous Rectification

G(1)

SPECIFICATION

ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)

S(3)

Parameter

Drain to Source Voltage

Symbol

Value

100

Unit

DSS

GSS

MARKING

Gate to Source Voltage

Drain Current (DC)

±20

Drain Current (Pulse)

PW10s, duty cycle1%

Power Dissipation

Tc=25C

280

2.1

070N10

C

175

Junction Temperature

LOT No.

Tstg

55 to +175

TO-220-3L

Storage Temperature

Source Current (Body Diode)

Avalanche Energy (Single Pulse) (Note 2)

Lead Temperature for Soldering

260

C

Purposes, 3mm from Case for 10 Seconds

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should

not be assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

2 : V =48V, L=100H, I =30A (Fig.1)

DD AV

Thermal Resistance Ratings

Parameter

Symbol

Value

2.08

71.4

Unit

Junction to Case Steady State

Junction to Ambient (Note 3)

Note 3 : Insertion mounted

JC

JA

C/W

September 2015 - Rev. 0

Publication Order Number :

NDPL070N10B/D

12 3 4 5 6

中文翻译

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