Datasheet > NDPL100N10BG

NDPL100N10BG

更新时间： 2024-11-11 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	583K
描述
N-Channel Power MOSFET

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NDPL100N10BG 数据手册

NDPL100N10B

Power MOSFET

www.onsemi.com

100V, 7.2mΩ, 100A, N-Channel

Features

• Low On-Resistance

• Low Gate Charge

• High Speed Switching

(on) Max

DSS

D Max

100A

7.2 mΩ@15V

8.7 mΩ@10V

100V

• 100% Avalanche Tested

• Pb-Free and RoHS Compliance

Electrical Connection

Specifications

N-Channel

Absolute Maximum Ratings at Ta = 25°C

Parameter

Drain to Source Voltage

Symbol

Value

100

Unit

DSS

1 : Gate

Gate to Source Voltage

Drain Current (DC)

GSS

2 : Drain

100

3 : Source

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

Power Dissipation

Tc=25°C

400

2.1

110

175

°C

Junction Temperature

Marking

Tstg

−55 to +175

100

Storage Temperature

Source Current (Body Diode)

Avalanche Energy (Single Pulse) *¹

147

Lead Temperature for Soldering

100N10

°C

260

Purposes, 3mm from Case for 10 Seconds

LOT No.

Thermal Resistance Ratings

Parameter

TO-220-3L

Symbol

Value

1.36

Unit

Junction to Case Steady State

Junction to Ambient *²

θJC

°C/W

71.4

θJA

Note : *¹V

=48V, L=100μH, I =40A (Fig.1)

*²Insertion mounted

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

March 2015 - Rev. 1

Publication Order Number :

NDPL100N10B/D

12 3 4 5

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