Datasheet > NDPL180N10BG

NDPL180N10BG

更新时间： 2024-11-26 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	595K
描述
N-Channel Power MOSFET

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NDPL180N10BG 数据手册

NDPL180N10B

Power MOSFET

www.onsemi.com

100V, 3.0mΩ, 180A, N-Channel

(on) Max

DSS

D Max

180A

Features

• Ultra Low On-Resistance

• Low Gate Charge

3.0mΩ@ 15V

3.5mΩ@ 10V

100V

• High Speed Switching

• 100% Avalanche Test

• Pb-Free and RoHS Compliance

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25°C

N-Channel

Unit

Parameter

Symbol

Value

Drain to Source Voltage

DSS

100

Gate to Source Voltage

GSS

Drain Current (DC)

180

100

1 : Gate

2 : Drain

3 : Source

Drain Current (DC) Limited by Package

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

Power Dissipation

Tc=25°C

600

2.1

200

175

°C

Junction Temperature

Storage Temperature

Tstg

−55 to +175

Marking

Source Current (Body Diode)

100

451

Avalanche Energy (Single Pulse) *¹

Lead Temperature for Soldering

260

°C

180N10

Purposes, 3mm from Case for 10 Seconds

LOT No.

Thermal Resistance Ratings

Parameter

Symbol

Value

0.75

Unit

TO-220-3L

Junction to Case Steady State

Junction to Ambient *²

θJC

°C/W

θJA

71.4

Note: *1 V =48V, L=100μH, I =70A (Fig.1)

*2 Insertion mounted

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

March 2015 - Rev. 3

Publication Order Number :

NDPL180N10B/D

12 3 4 5

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