NDP710AE

更新时间： 2024-09-20 22:40:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	76K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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NDP710AE 数据手册

May 1994

NDP710A / NDP710AE / NDP710B / NDP710BE

NDB710A / NDB710AE / NDB710B / NDB710BE

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially

tailored to minimize on-state resistance, provide

superior switching performance, and withstand high

energy pulses in the avalanche and commutation

modes. These devices are particularly suited for low

voltage applications such as automotive, DC/DC

converters, PWM motor controls, and other battery

powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

42 and 40A, 100V. R_DS(ON)= 0.038 and 0.042W.

Critical DC electrical parameters specified at

elevated temperature.

Rugged internal source-drain diode can eliminate

the need for an external Zener diode transient

suppressor.

175°C maximum junction temperature rating.

High density cell design (3 million/in²) for extremely

low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both

through hole and surface mount applications.

_____________________________________________________________________

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

NDP710A NDP710AE

NDB710A NDB710AE

NDP710B NDP710BE

NDB710B NDB710BE

Symbol Parameter

Units

V_DSS

V_DGR

V_GSS

Drain-Source Voltage

100

±20

±40

Drain-Gate Voltage (R_GS< 1 MW)

Gate-Source Voltage - Continuous

- Nonrepetitive (t_P< 50 ms)

Drain Current - Continuous

- Pulsed

I_D

168

160

P_D

150

Total Power Dissipation @ T_C= 25°C

Derate above 25°C

W/°C

°C

T_J,T_STGOperating and Storage Temperature Range

-65 to 175

275

T_L

Maximum lead temperature for soldering

purposes, 1/8" from case for 5 seconds

°C

NDP710.SAM

12 3 4 5 6

中文翻译

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与NDP710AE相关器件

型号	品牌	获取价格	描述	数据表
NDP710AEL	TI	获取价格	42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710AES62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me
NDP710AL	TI	获取价格	42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me
NDP710B	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDP710BE	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDP710BEL	TI	获取价格	40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710BES62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
NDP710BL	TI	获取价格	40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710BS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me

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