5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> NDP708A
NDP708A PDF预览

NDP708A

更新时间： 2024-11-20 22:40:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 77K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

NDP708A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.77
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：80 V最大漏极电流 (Abs) (ID)：60 A
最大漏极电流 (ID)：60 A最大漏源导通电阻：0.022 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：180 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NDP708A 数据手册

 浏览型号NDP708A的Datasheet PDF文件第2页浏览型号NDP708A的Datasheet PDF文件第3页浏览型号NDP708A的Datasheet PDF文件第4页浏览型号NDP708A的Datasheet PDF文件第5页浏览型号NDP708A的Datasheet PDF文件第6页 
May 1994  
NDP708A / NDP708AE / NDP708B / NDP708BE  
NDB708A / NDB708AE / NDB708B / NDB708BE  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially  
tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line  
power loss, and resistance to transients are needed.  
60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.  
Critical DC electrical parameters specified at  
elevated temperature.  
Rugged internal source-drain diode can eliminate  
the need for an external Zener diode transient  
suppressor.  
175°C maximum junction temperature rating.  
High density cell design (3 million/in²) for extremely  
low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both  
through hole and surface mount applications.  
_____________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
NDP708A NDP708AE  
NDB708A NDB708AE  
NDP708B NDP708BE  
NDB708B NDB708BE  
Symbol Parameter  
Units  
V
VDSS  
VDGR  
VGSS  
Drain-Source Voltage  
80  
80  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
±20  
±40  
V
V
- Nonrepetitive (tP < 50 ms)  
Drain Current - Continuous  
- Pulsed  
ID  
60  
54  
A
180  
162  
A
PD  
150  
1
W
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
W/°C  
°C  
°C  
TJ,TSTG Operating and Storage Temperature Range  
-65 to 175  
275  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
© 1997 Fairchild Semiconductor Corporation  
NDP708.SAM  
123456

中文翻译

下载PDF

与NDP708A相关器件

型号 品牌 获取价格 描述 数据表
NDP708AE FAIRCHILD

获取价格

 		N-Channel Enhancement Mode Field Effect Transistor
NDP708AE TI

获取价格

 		60A, 80V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708AEL TI

获取价格

 		60A, 80V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708AES62Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 60A I(D), 80V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
NDP708B FAIRCHILD

获取价格

 		N-Channel Enhancement Mode Field Effect Transistor
NDP708B TI

获取价格

 		52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708BE FAIRCHILD

获取价格

 		N-Channel Enhancement Mode Field Effect Transistor
NDP708BE TI

获取价格

 		52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708BEL TI

获取价格

 		52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708BES62Z FAIRCHILD

获取价格

 		Power Field-Effect Transistor, 54A I(D), 80V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta

与NDP708A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证