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NDP708B PDF预览

NDP708B

更新时间： 2024-09-20 22:40:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 77K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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NDP708B 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.77
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：80 V
最大漏极电流 (Abs) (ID)：54 A最大漏极电流 (ID)：54 A
最大漏源导通电阻：0.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：150 W最大脉冲漏极电流 (IDM)：162 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDP708B 数据手册

 浏览型号NDP708B的Datasheet PDF文件第2页浏览型号NDP708B的Datasheet PDF文件第3页浏览型号NDP708B的Datasheet PDF文件第4页浏览型号NDP708B的Datasheet PDF文件第5页浏览型号NDP708B的Datasheet PDF文件第6页 
May 1994  
NDP708A / NDP708AE / NDP708B / NDP708BE  
NDB708A / NDB708AE / NDB708B / NDB708BE  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
These N-channel enhancement mode power field  
effect transistors are produced using Fairchild's  
proprietary, high cell density, DMOS technology. This  
very high density process has been especially  
tailored to minimize on-state resistance, provide  
superior switching performance, and withstand high  
energy pulses in the avalanche and commutation  
modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery  
powered circuits where fast switching, low in-line  
power loss, and resistance to transients are needed.  
60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.  
Critical DC electrical parameters specified at  
elevated temperature.  
Rugged internal source-drain diode can eliminate  
the need for an external Zener diode transient  
suppressor.  
175°C maximum junction temperature rating.  
High density cell design (3 million/in²) for extremely  
low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both  
through hole and surface mount applications.  
_____________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
NDP708A NDP708AE  
NDB708A NDB708AE  
NDP708B NDP708BE  
NDB708B NDB708BE  
Symbol Parameter  
Units  
V
VDSS  
VDGR  
VGSS  
Drain-Source Voltage  
80  
80  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
±20  
±40  
V
V
- Nonrepetitive (tP < 50 ms)  
Drain Current - Continuous  
- Pulsed  
ID  
60  
54  
A
180  
162  
A
PD  
150  
1
W
Total Power Dissipation @ TC = 25°C  
Derate above 25°C  
W/°C  
°C  
°C  
TJ,TSTG Operating and Storage Temperature Range  
-65 to 175  
275  
TL  
Maximum lead temperature for soldering  
purposes, 1/8" from case for 5 seconds  
© 1997 Fairchild Semiconductor Corporation  
NDP708.SAM  
123456

中文翻译

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NDP708BE FAIRCHILD

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 		N-Channel Enhancement Mode Field Effect Transistor
NDP708BE TI

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 		52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708BEL TI

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 		52A, 80V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP708BES62Z FAIRCHILD

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 		Power Field-Effect Transistor, 54A I(D), 80V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta
NDP710A FAIRCHILD

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 		N-Channel Enhancement Mode Field Effect Transistor
NDP710AE FAIRCHILD

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 		N-Channel Enhancement Mode Field Effect Transistor
NDP710AEL TI

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 		42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710AES62Z FAIRCHILD

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 		Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me
NDP710AL TI

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 		42A, 100V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP710AS62Z FAIRCHILD

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 		Power Field-Effect Transistor, 42A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Me

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