Datasheet > NDP7060S62Z

NDP7060S62Z

更新时间： 2024-11-21 20:11:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	360K
描述
Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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NDP7060S62Z 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.71	雪崩能效等级（Eas）：	550 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	75 A	最大漏源导通电阻：	0.013 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	225 A
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

NDP7060S62Z 数据手册

May 1996

NDP7060 / NDB7060

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as automotive, DC/DC converters, PWM motor controls, and

other battery powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

75A, 60V. R_DS(ON)= 0.013W @ V_GS=10V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both through hole

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_C= 25°C unless otherwise noted

NDP7060

NDB7060

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1 MW)

V_GSS

Gate-Source Voltage - Continuous

± 20

± 40

- Nonrepetitive (t_P< 50 µs)

Drain Current - Continuous

I_D

- Pulsed

225

150

W/°C

°C

P_D

Maximum Power Dissipation @ T_C= 25°C

Derate above 25°C

Operating and Storage Temperature Range

-65 to 175

275

T_J,T_STG

T_L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

°C

NDP7060.SAM

12 3 4 5 6 7...12

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与NDP7060S62Z相关器件

型号	品牌	获取价格	描述	数据表
NDP7061	FAIRCHILD	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDP7061L	FAIRCHILD	获取价格	N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7061L	TI	获取价格	60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP7061L/J69Z	TI	获取价格	60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP7061LJ69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
NDP7061LS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
NDP7061S62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 64A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
NDP706A	TI	获取价格	75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
NDP706AE	TI	获取价格	75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP706AEL	TI	获取价格	TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET

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