NDP7060_NL

更新时间： 2024-09-21 13:11:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲局域网
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12页	361K
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NDP7060_NL 数据手册

May 1996

NDP7060 / NDB7060

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as automotive, DC/DC converters, PWM motor controls, and

other battery powered circuits where fast switching, low in-line

power loss, and resistance to transients are needed.

75A, 60V. R_DS(ON)= 0.013W @ V_GS=10V.

Critical DC electrical parameters specified at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.

High density cell design for extremely low R_DS(ON)

TO-220 and TO-263 (D²PAK) package for both through hole

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter

T_C= 25°C unless otherwise noted

NDP7060

NDB7060

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1 MW)

V_GSS

Gate-Source Voltage - Continuous

± 20

± 40

- Nonrepetitive (t_P< 50 µs)

Drain Current - Continuous

I_D

- Pulsed

225

150

W/°C

°C

P_D

Maximum Power Dissipation @ T_C= 25°C

Derate above 25°C

Operating and Storage Temperature Range

-65 to 175

275

T_J,T_STG

T_L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

°C

NDP7060.SAM

12 3 4 5 6 7...12

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