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NDP7060L

更新时间： 2024-11-07 22:40:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 67K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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中文翻译

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NDP7060L 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.78
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：550 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：150 W
最大脉冲漏极电流 (IDM)：225 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NDP7060L 数据手册

 浏览型号NDP7060L的Datasheet PDF文件第2页浏览型号NDP7060L的Datasheet PDF文件第3页浏览型号NDP7060L的Datasheet PDF文件第4页浏览型号NDP7060L的Datasheet PDF文件第5页浏览型号NDP7060L的Datasheet PDF文件第6页 
June 1996  
NDP7060L / NDB7060L  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
General Description  
Features  
These logic level N-Channel enhancement mode power field  
effect transistors are produced using Fairchild's proprietary,  
high cell density, DMOS technology. This very high density  
process has been especially tailored to minimize on-state  
resistance, provide superior switching performance, and  
withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited for  
low voltage applications such as automotive, DC/DC  
converters, PWM motor controls, and other battery powered  
circuits where fast switching, low in-line power loss, and  
resistance to transients are needed.  
75A, 60V. RDS(ON) = 0.015W @ VGS = 5V  
Low drive requirements allowing operation directly from logic  
drivers. VGS(TH) < 2.0V.  
Critical DC electrical parameters specified at elevated  
temperature.  
Rugged internal source-drain diode can eliminate the need  
for an external Zener diode transient suppressor.  
175°C maximum junction temperature rating.  
High density cell design for extremely low RDS(ON)  
.
TO-220 and TO-263 (D2PAK) package for both through hole  
and surface mount applications.  
________________________________________________________________________________  
D
G
S
Absolute Maximum Ratings  
Symbol Parameter  
TC = 25°C unless otherwise noted  
NDP7060L  
NDB7060L  
Units  
V
Drain-Source Voltage  
60  
60  
VDSS  
VDGR  
V
Drain-Gate Voltage (RGS < 1 MW)  
Gate-Source Voltage - Continuous  
± 20  
± 40  
75  
V
VGSS  
- Nonrepetitive (tP < 50 µs)  
Drain Current - Continuous  
ID  
A
- Pulsed  
225  
PD  
Total Power Dissipation @ TC = 25°C  
150  
W
W/°C  
°C  
Derate above 25°C  
Operating and Storage Temperature Range  
1
-65 to 175  
TJ,TSTG  
© 1997 Fairchild Semiconductor Corporation  
NDP7060L Rev. B2 / NDB7060L Rev. C  
123456

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NDP7060L/J69Z TI

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 		75A, 60V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP7060LJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
NDP7060LS62Z FAIRCHILD

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 		Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
NDP7060S62Z FAIRCHILD

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 		Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
NDP7061 FAIRCHILD

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 		N-Channel Enhancement Mode Field Effect Transistor
NDP7061L FAIRCHILD

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 		N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7061L TI

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 		60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP7061L/J69Z TI

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 		60A, 60V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP7061LJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
NDP7061LS62Z FAIRCHILD

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 		Power Field-Effect Transistor, 60A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Met

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