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NDP05N50Z PDF预览

NDP05N50Z

更新时间： 2024-09-20 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 158K
描述
N-Channel Power MOSFET 500 V, 1.25 Ω

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NDP05N50Z 数据手册

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NDF05N50Z, NDP05N50Z,  
NDD05N50Z  
N-Channel Power MOSFET  
500 V, 1.25 W  
Features  
http://onsemi.com  
• Low ON Resistance  
• Low Gate Charge  
• 100% Avalanche Tested  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
(TYP) @ 2.2 A  
DS(on)  
DSS  
500 V  
1.25 W  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
V
NDF  
NDP NDD Unit  
N−Channel  
D (2)  
Drain−to−Source Voltage  
Continuous Drain Current R  
500  
V
A
DSS  
I
D
5
5
4.7  
3
q
JC  
(Note 1)  
Continuous Drain Current  
I
D
3.2  
(Note 1)  
3.2  
20  
96  
A
A
R
q
JC  
, T = 100°C  
A
G (1)  
Pulsed Drain Current, V  
10 V  
@
I
20  
(Note 1)  
19  
83  
GS  
DM  
Power Dissipation R  
P
D
28  
W
V
q
JC  
S (3)  
Gate−to−Source Voltage  
V
GS  
30  
Single Pulse Avalanche Energy,  
D
E
AS  
130  
mJ  
I
= 5.0 A  
ESD (HBM) (JESD22−A114)  
V
3000  
V
V
esd  
RMS Isolation Voltage (t =  
V
ISO  
4500  
0.3 sec., R.H. ≤ 30%, T =  
4
A
25°C) (Figure 15)  
4
Peak Diode Recovery  
dv/dt  
4.5 (Note 2)  
5
V/ns  
A
Continuous Source Current  
(Body Diode)  
I
S
2
1
1
1
2
1
2
3
2
3
3
3
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
PKG  
300  
260  
°C  
L
DPAK  
TO−220FP TO−220AB  
CASE 221D CASE 221ACASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
T
CASE 369AA  
STYLE 2  
Operating Junction and  
Storage Temperature Range  
T , T  
−55 to 150  
°C  
J
stg  
MARKING AND ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Limited by maximum junction temperature  
2. I = 4.4 A, di/dt ≤ 100 A/ms, V ≤ BV  
, T = +150°C  
J
S
DD  
DSS  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 − Rev. 0  
NDF05N50Z/D  
 
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