NDP08N60Z

更新时间： 2024-09-20 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	108K
描述
N-Channel Power MOSFET 600 V, 0.95 Ω

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中文翻译

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数据手册

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NDP08N60Z 数据手册

NDF08N60Z, NDP08N60Z

N-Channel Power MOSFET

600 V, 0.95 W

Features

• Low ON Resistance

• Low Gate Charge

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

DSS

(MAX) @ 3.5 A

DS(ON)

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

600 V

0.95 W

Rating

Symbol NDF08N60Z NDP08N60Z Unit

Drain−to−Source Voltage

600

7.5 (Note 1)

DSS

N−Channel

Continuous Drain Current

7.5

4.8

D (2)

Continuous Drain Current

4.8 (Note 1)

30 (Note 1)

T = 100°C

Pulsed Drain Current,

@ 10 V

G (1)

Power Dissipation

139

Gate−to−Source Voltage

Single Pulse Avalanche

S (3)

TO−220FP

CASE 221D

STYLE 1

235

Energy, I = 7.5 A

MARKING

DIAGRAM

ESD (HBM)

(JESD 22−A114)

4000

esd

RMS Isolation Voltage

4500

ISO

(t = 0.3 sec., R.H. ≤ 30%,

T = 25°C) (Figure 14)

NDF08N60ZG

NDP08N60ZG

AYWW

Peak Diode Recovery

dv/dt

4.5

7.5

V/ns

Continuous Source

Current (Body Diode)

Maximum Temperature for

Soldering Leads

260

°C

Gate

Source

TO−220

CASE 221A

STYLE 5

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

Drain

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Location Code

= Year

= Work Week

= Pb−Free Package

1. Limited by maximum junction temperature

2. I v 7.5 A, di/dt ≤ 200 A/ms, V ≤ BV

, T ≤ 150°C.

DSS

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

July, 2010 − Rev. 0

NDF08N60Z/D

12 3 4 5 6

中文翻译

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