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NDP08N60ZG

更新时间： 2024-11-08 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 108K
描述
N-Channel Power MOSFET 600 V, 0.95 Ω

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NDP08N60ZG 数据手册

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NDF08N60Z, NDP08N60Z  
N-Channel Power MOSFET  
600 V, 0.95 W  
Features  
• Low ON Resistance  
• Low Gate Charge  
http://onsemi.com  
• 100% Avalanche Tested  
• These Devices are Pb−Free and are RoHS Compliant  
V
DSS  
R
(MAX) @ 3.5 A  
DS(ON)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
600 V  
0.95 W  
Rating  
Symbol NDF08N60Z NDP08N60Z Unit  
Drain−to−Source Voltage  
V
600  
7.5 (Note 1)  
V
A
DSS  
N−Channel  
Continuous Drain Current  
R
I
D
7.5  
4.8  
30  
D (2)  
q
JC  
Continuous Drain Current  
I
D
4.8 (Note 1)  
30 (Note 1)  
35  
A
A
R
q
JC  
T = 100°C  
A
Pulsed Drain Current,  
@ 10 V  
I
DM  
G (1)  
V
GS  
Power Dissipation  
P
139  
W
V
D
Gate−to−Source Voltage  
Single Pulse Avalanche  
V
30  
GS  
S (3)  
TO−220FP  
CASE 221D  
STYLE 1  
E
235  
mJ  
AS  
Energy, I = 7.5 A  
MARKING  
DIAGRAM  
D
ESD (HBM)  
(JESD 22−A114)  
V
4000  
V
V
esd  
RMS Isolation Voltage  
V
4500  
ISO  
(t = 0.3 sec., R.H. ≤ 30%,  
T = 25°C) (Figure 14)  
A
NDF08N60ZG  
or  
NDP08N60ZG  
AYWW  
Peak Diode Recovery  
dv/dt  
4.5  
7.5  
V/ns  
A
Continuous Source  
Current (Body Diode)  
I
S
Maximum Temperature for  
Soldering Leads  
T
260  
°C  
°C  
Gate  
Source  
L
TO−220  
CASE 221A  
STYLE 5  
Operating Junction and  
Storage Temperature Range  
T , T  
−55 to 150  
J
stg  
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
1. Limited by maximum junction temperature  
2. I v 7.5 A, di/dt ≤ 200 A/ms, V ≤ BV  
, T ≤ 150°C.  
J
D
DD  
DSS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 − Rev. 0  
NDF08N60Z/D  
 
123456

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