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NDP10N60Z PDF预览

NDP10N60Z

更新时间： 2024-11-08 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 129K
描述
N-Channel Power MOSFET 0.65 Ω, 600 Volts

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NDP10N60Z 数据手册

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NDF10N60Z, NDP10N60Z  
N-Channel Power MOSFET  
0.65 W, 600 Volts  
Features  
• Low ON Resistance  
• Low Gate Charge  
• Zener Diode−protected Gate  
• 100% Avalanche Tested  
• ROHS Compliant  
http://onsemi.com  
V
R
DS(ON)  
(TYP) @ 5 A  
DSS  
• This is a Pb−Free Device  
Applications  
600 V  
0.65 Ω  
• Adapter (Notebook, Printer, Gaming)  
• LCD Panel Power  
N−Channel  
• ATX Power Supplies  
• Lighting Ballasts  
D (2)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol NDF10N60Z NDP10N60Z Unit  
G (1)  
Drain−to−Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
V
600 (Note 1)  
10 (Note 2)  
5.7 (Note 2)  
V
A
A
DSS  
I
D
I
D
S (3)  
TO−220FP  
CASE 221D  
STYLE 1  
T = 100°C  
A
Pulsed Drain Current,  
I
36 (Note 2)  
A
MARKING  
DIAGRAM  
DM  
V
GS  
@ 10 V  
Power Dissipation (Note 1)  
P
36  
125  
W
V
D
Gate−to−Source Voltage  
V
GS  
30  
Single Pulse Avalanche  
Energy, L = 6.0 mH,  
E
300  
mJ  
AS  
NDF10N60ZG  
or  
NDP10N60ZG  
AYWW  
I
D
= 10 A  
ESD (HBM)  
(JESD 22−114−B)  
V
esd  
3900  
V
V
RMS Isolation Voltage  
(t = 0.3 sec., R.H. ≤ 30%,  
T = 25°C) (Figure 13)  
A
V
ISO  
4500  
Gate  
Source  
TO−220AB  
CASE 221A  
STYLE 5  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
10  
V/ns  
A
Drain  
Continuous Source  
I
S
Current (Body Diode)  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for  
10 s Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
Operating Junction and  
T , T  
−55 to 150  
°C  
J
stg  
Storage Temperature Range  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
TO−220FP  
TO−220AB  
Shipping  
NDF10N60ZG  
NDP10N60ZG  
50 Units/Rail  
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu  
In Development  
2. Limited by maximum junction temperature  
3. I ≤ 10 A, di/dt ≤ 200 A/ms, V = 80% BV  
S
DD  
DSS  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 − Rev. 1  
NDF10N60Z/D  
 
123456

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