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NDP11N50Z PDF预览

NDP11N50Z

更新时间： 2024-11-08 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 109K
描述
N-Channel Power MOSFET 500 V, 0.52 

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NDP11N50Z 数据手册

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NDF11N50Z, NDP11N50Z  
N-Channel Power MOSFET  
500 V, 0.52 W  
Features  
• Low ON Resistance  
• Low Gate Charge  
http://onsemi.com  
• 100% Avalanche Tested  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
(MAX) @ 4.5 A  
DS(ON)  
DSS  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
500 V  
0.52 Ω  
Rating  
Symbol NDF11N50Z NDP11N50Z Unit  
Drain−to−Source Voltage  
V
500  
V
A
DSS  
N−Channel  
Continuous Drain Current,  
R
I
D
10.5 (Note  
2)  
10.5  
6.7  
42  
D (2)  
q
JC  
Continuous Drain Current  
I
D
6.7 (Note 2)  
42 (Note 2)  
36  
A
A
T
A
= 100°C, R  
q
JC  
Pulsed Drain Current,  
@ 10 V  
I
DM  
V
GS  
G (1)  
Power Dissipation, R  
(Note 1)  
P
145  
W
q
JC  
D
Gate−to−Source Voltage  
V
GS  
30  
V
S (3)  
TO−220FP  
CASE 221D  
STYLE 1  
Single Pulse Avalanche  
E
AS  
190  
mJ  
MARKING  
DIAGRAM  
Energy, I = 10.5 A  
D
ESD (HBM)  
(JESD22−A114)  
V
4000  
V
V
esd  
RMS Isolation Voltage  
V
ISO  
4500  
(t = 0.3 sec., R.H. ≤ 30%,  
T
= 25°C) (Figure 14)  
A
NDF11N50ZG  
or  
NDP11N50ZG  
AYWW  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
10.5  
V/ns  
A
Continuous Source Cur-  
rent (Body Diode)  
I
S
Gate  
Source  
Maximum Temperature for  
Soldering Leads  
T
260  
°C  
°C  
L
TO−220  
CASE 221A  
STYLE 5  
Operating Junction and  
T , T  
−55 to 150  
J
stg  
Storage Temperature Range  
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= Pb−Free Package  
1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq  
[2 oz] including traces).  
2. Limited by maximum junction temperature  
3. I ≤ 10.5 A, di/dt ≤ 200 A/ms, V ≤ BV  
, T ≤ 150°C.  
J
d
DD  
DSS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 − Rev. 0  
NDF11N50Z/D  
 
1234567

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