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NDP05N50ZG PDF预览

NDP05N50ZG

更新时间: 2024-11-10 06:00:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 158K
描述
N-Channel Power MOSFET 500 V, 1.25 Ω

NDP05N50ZG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):130 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):5.5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

NDP05N50ZG 数据手册

 浏览型号NDP05N50ZG的Datasheet PDF文件第2页浏览型号NDP05N50ZG的Datasheet PDF文件第3页浏览型号NDP05N50ZG的Datasheet PDF文件第4页浏览型号NDP05N50ZG的Datasheet PDF文件第5页浏览型号NDP05N50ZG的Datasheet PDF文件第6页浏览型号NDP05N50ZG的Datasheet PDF文件第7页 
NDF05N50Z, NDP05N50Z,  
NDD05N50Z  
N-Channel Power MOSFET  
500 V, 1.25 W  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
These Devices are PbFree and are RoHS Compliant  
V
R
(TYP) @ 2.2 A  
DS(on)  
DSS  
500 V  
1.25 W  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
V
NDF  
NDP NDD Unit  
NChannel  
D (2)  
DraintoSource Voltage  
Continuous Drain Current R  
500  
V
A
DSS  
I
D
5
5
4.7  
3
q
JC  
(Note 1)  
Continuous Drain Current  
I
D
3.2  
(Note 1)  
3.2  
20  
96  
A
A
R
q
JC  
, T = 100°C  
A
G (1)  
Pulsed Drain Current, V  
10 V  
@
I
20  
(Note 1)  
19  
83  
GS  
DM  
Power Dissipation R  
P
D
28  
W
V
q
JC  
S (3)  
GatetoSource Voltage  
V
GS  
30  
Single Pulse Avalanche Energy,  
D
E
AS  
130  
mJ  
I
= 5.0 A  
ESD (HBM) (JESD22A114)  
V
3000  
V
V
esd  
RMS Isolation Voltage (t =  
V
ISO  
4500  
0.3 sec., R.H. 30%, T =  
4
A
25°C) (Figure 15)  
4
Peak Diode Recovery  
dv/dt  
4.5 (Note 2)  
5
V/ns  
A
Continuous Source Current  
(Body Diode)  
I
S
2
1
1
1
2
1
2
3
2
3
3
3
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
PKG  
300  
260  
°C  
L
DPAK  
TO220FP TO220AB  
CASE 221D CASE 221ACASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
T
CASE 369AA  
STYLE 2  
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
MARKING AND ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Limited by maximum junction temperature  
2. I = 4.4 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
S
DD  
DSS  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 Rev. 0  
NDF05N50Z/D  
 

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