NDP08N50Z

更新时间： 2024-11-08 05:53:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	137K
描述
N-Channel Power MOSFET 500 V, 0.69

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NDP08N50Z 数据手册

NDF08N50Z, NDP08N50Z

N-Channel Power MOSFET

500 V, 0.69 W

Features

• Low ON Resistance

• Low Gate Charge

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

DSS

(TYP) @ 3.6 A

DS(ON)

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

500 V

0.69 W

Rating

Symbol NDF08N50Z NDP08N50Z Unit

Drain−to−Source Voltage

500

7.5 (Note 1)

DSS

N−Channel

Continuous Drain Current

7.5

4.7

D (2)

Continuous Drain Current

4.7 (Note 1)

30 (Note 1)

T = 100°C

Pulsed Drain Current,

@ 10 V

G (1)

Power Dissipation

125

Gate−to−Source Voltage

Single Pulse Avalanche

S (3)

TO−220FP

CASE 221D

STYLE 1

190

Energy, I = 7.5 A

MARKING

DIAGRAM

ESD (HBM)

(JESD 22−A114)

3500

esd

RMS Isolation Voltage

4500

ISO

(t = 0.3 sec., R.H. ≤ 30%,

T = 25°C) (Figure 14)

NDF08N50ZG

NDP08N50ZG

AYWW

Peak Diode Recovery

dv/dt

4.5

7.5

V/ns

Continuous Source

Current (Body Diode)

Maximum Temperature for

Soldering Leads

260

°C

Gate

Source

TO−220AB

CASE 221A

STYLE 5

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

Drain

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Location Code

= Year

= Work Week

= Pb−Free Package

1. Limited by maximum junction temperature

2. I = 7.5 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

ORDERING INFORMATION

Device

Package

TO−220FP

TO−220AB

Shipping

NDF08N50ZG

NDP08N50ZG

50 Units/Rail

In Development

Publication Order Number:

April, 2010 − Rev. 1

NDF08N50Z/D

12 3 4 5 6

中文翻译

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