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NDP06N60Z PDF预览

NDP06N60Z

更新时间: 2024-11-08 05:54:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 134K
描述
NDP06N60Z

NDP06N60Z 数据手册

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NDF06N60Z, NDP06N60Z  
N-Channel Power MOSFET  
0.98 W, 600 Volts  
Features  
Low ON Resistance  
Low Gate Charge  
http://onsemi.com  
100% Avalanche Tested  
These Devices are PbFree and are RoHS Compliant  
V
DSS  
R
(TYP) @ 3 A  
DS(ON)  
Applications  
600 V  
0.98 Ω  
Adapter (Notebook, Printer, Gaming)  
LCD Panel Power  
NChannel  
Lighting Ballasts  
D (2)  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol NDF06N60Z NDP06N60Z Unit  
DraintoSource Voltage  
Continuous Drain Current  
Continuous Drain Current  
V
600 (Note 1)  
6.0 (Note 2)  
3.8 (Note 2)  
V
A
A
DSS  
I
D
G (1)  
I
D
T = 100°C  
A
S (3)  
Pulsed Drain Current,  
I
20 (Note 2)  
A
TO220FP  
CASE 221D  
STYLE 1  
DM  
V
GS  
@ 10 V  
MARKING  
DIAGRAM  
Power Dissipation (Note 1)  
P
31  
113  
W
V
D
GatetoSource Voltage  
V
30  
GS  
Single Pulse Avalanche  
Energy, L = 6.3 mH,  
E
AS  
113  
mJ  
I
D
= 6.0 A  
ESD (HBM)  
(JESD 22114B)  
V
3000  
V
V
NDF06N60ZG  
or  
NDP06N60ZG  
AYWW  
esd  
ISO  
RMS Isolation Voltage  
(t = 0.3 sec., R.H. 30%,  
T = 25°C) (Figure 13)  
A
V
4500  
Gate  
Source  
TO220AB  
CASE 221A  
STYLE 5  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
6.0  
V/ns  
A
Continuous Source  
I
S
Current (Body Diode)  
Drain  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for  
10 s Package Body for 10 s  
T
300  
260  
°C  
L
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= PbFree Package  
T
PKG  
Operating Junction and  
T , T  
55 to 150  
°C  
J
stg  
Storage Temperature Range  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
TO220FP  
TO220AB  
Shipping  
50 Units/Rail  
In Development  
1. Surface mounted on FR4 board using 1sq. pad size, 1 oz cu  
NDF06N60ZG  
NDP06N60ZG  
2. Limited by maximum junction temperature  
3. I = 6.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 Rev. 0  
NDF06N60Z/D  
 

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