Datasheet > NCE55H11

NCE55H11

更新时间： 2024-11-18 10:28:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	377K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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NCE55H11 数据手册

Pb Free Product

http://www.ncepower.com

NCE55H11

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE55H11 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

GENERAL FEATURES

● V_DS=55V,I_D=110A

R_DS(ON)< 7.5mΩ @ V_GS=10V (Typ:5.5mΩ)

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

Marking and pin Assignment

●

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

100% UIS TESTED!

100% ΔVds TESTED!

TO-220 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE55H11

TO-220

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

±20

110

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

390

200

1.33

1100

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy (Note 5)

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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