http://www.ncepower.com
NCE6004
NCE N-Channel Enhancement Mode Power MOSFET
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Description
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The NCE6004 uses advanced trench technology to provide
excellent RDS(ON), low gate charge. This device is suitable for
use as a Battery protection or in other switching application.
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Schematic Diagram
General Features
● VDS =60V,ID =4A
RDS(ON) <50mΩ @ VGS=10V
RDS(ON) < 80mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and Pin Assignment
Application
●Battery switch
●DC/DC converter
SOT-23 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
NCE6004
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol
Limit
60
Unit
Drain-Source Voltage
VDS
VGS
ID
V
V
Gate-Source Voltage
±20
4
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
A
IDM
16
A
Single pulse avalanche energy (Note 5)
Maximum Power Dissipation
EAS
36
mJ
W
℃
PD
1.7
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
Thermal Resistance,Junction-to-Case (Note 2)
RθJA
RθJC
73.5
55
℃/W
℃/W
Wuxi NCE Power Co., Ltd
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