Datasheet > NCE6005AN

NCE6005AN

更新时间： 2024-11-22 17:01:55

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
8页	707K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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中文翻译

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数据手册

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NCE6005AN 数据手册

NCE6005AN

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE6005AN uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=60V,I_D=5A

R_DS(ON)<30mΩ @ V_GS=10V (Typ.26mΩ)

Schematic diagram

R_DS(ON)<38mΩ @ V_GS=4.5V (Typ.32mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Marking and pin assignment

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

SOT23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

8 mm

Quantity

3000 units

6005AN

NCE6005AN-S

SOT23-6L

Ø180mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

VGS

±20

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

3.5

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

62.5

℃/W

Wuxi NCE Power Co., Ltd

Page 1

V4.0

12 3 4 5 6 7 8

中文翻译

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