http://www.ncepower.com
NCE6009XS
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6009XS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 60V,ID =9A
Schematic diagram
RDS(ON) < 16mΩ @ VGS=10V (Typ:9.3mΩ)
RDS(ON) < 18mΩ @ VGS=4.5V (Typ:12.7mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
Marking and pin assignment
● Load switch
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE6009XS
NCE6009XS
SOP-8
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
9
6.4
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
36
A
Maximum Power Dissipation
2.6
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
48
℃/W
Wuxi NCE Power Co., Ltd
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