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NCE6009AS PDF预览

NCE6009AS

更新时间: 2024-04-09 19:00:09
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 337K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE6009AS 数据手册

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http://www.ncepower.com  
NCE6009XS  
NCE N-Channel Enhancement Mode Power MOSFET  
Description  
The NCE6009XS uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
General Features  
VDS = 60V,ID =9A  
Schematic diagram  
RDS(ON) < 16m@ VGS=10V (Typ:9.3m)  
RDS(ON) < 18m@ VGS=4.5V (Typ:12.7m)  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Low gate to drain charge to reduce switching losses  
Application  
Power switching application  
Marking and pin assignment  
Load switch  
SOP-8 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE6009XS  
NCE6009XS  
SOP-8  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
±20  
VGS  
9
6.4  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
36  
A
Maximum Power Dissipation  
2.6  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
48  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
v1.0  

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