Datasheet > NCE55H12

NCE55H12

更新时间： 2024-11-19 15:19:31

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	403K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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数据手册

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NCE55H12 数据手册

Pb Free Product

http://www.ncepower.com

NCE55H12

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE55H12 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=55V,I_D=120A

R_DS(ON)< 5.5mΩ @ V_GS=10V (Typ:4.1mΩ)

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin assignment

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE55H12

TO-220-3L

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

120

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

420

200

1.33

Maximum Power Dissipation

Derating factor

P_D

W/℃

Wuxi NCE Power Semiconductor Co., Ltd

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