5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> MTP3N100E
MTP3N100E PDF预览

MTP3N100E

更新时间： 2024-11-23 22:45:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 209K
描述
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

阅读下载

中文翻译

获取价格

MTP3N100E 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.71其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：245 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：1000 V
最大漏极电流 (Abs) (ID)：3 A最大漏极电流 (ID)：3 A
最大漏源导通电阻：4 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：9 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTP3N100E 数据手册

 浏览型号MTP3N100E的Datasheet PDF文件第2页浏览型号MTP3N100E的Datasheet PDF文件第3页浏览型号MTP3N100E的Datasheet PDF文件第4页浏览型号MTP3N100E的Datasheet PDF文件第5页浏览型号MTP3N100E的Datasheet PDF文件第6页浏览型号MTP3N100E的Datasheet PDF文件第7页 
Order this document  
by MTP3N100E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
3.0 AMPERES  
1000 VOLTS  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage–blocking capability without  
degrading performance over time. In addition, this advanced TMOS  
E–FET is designed to withstand high energy in the avalanche and  
commutation modes. The new energy efficient design also offers a  
drain–to–source diode with a fast recovery time. Designed for high  
voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
R
= 4.0 OHM  
DS(on)  
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
D
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
G
CASE 221A–06, Style 5  
TO–220AB  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
1000  
1000  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
GS  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
3.0  
2.4  
9.0  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
125  
1.0  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
245  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 150 Vdc, V = 10 Vdc, I = 7.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
θJC  
R
θJA  
1.00  
62.5  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1995  
12345678

中文翻译

下载PDF

MTP3N100E 替代型号

型号 品牌 替代类型 描述 数据表
MTB3N100E ONSEMI

功能相似

 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1119 TOSHIBA

功能相似

 N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE AP

与MTP3N100E相关器件

型号 品牌 获取价格 描述 数据表
MTP3N100E16 MOTOROLA

获取价格

 		Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EA MOTOROLA

获取价格

 		Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EA16A MOTOROLA

获取价格

 		Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EAF MOTOROLA

获取价格

 		3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EAJ MOTOROLA

获取价格

 		3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EC MOTOROLA

获取价格

 		暂无描述
MTP3N100ED1 MOTOROLA

获取价格

 		Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EN MOTOROLA

获取价格

 		3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100ES MOTOROLA

获取价格

 		暂无描述
MTP3N100ET MOTOROLA

获取价格

 		3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

与MTP3N100E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证