MTP3N100ES

更新时间： 2024-01-03 12:51:02

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

3.0 AMPERES

1000 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 4.0 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

1000

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

± 20

± 40

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

3.0

2.4

9.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

245

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 150 Vdc, V = 10 Vdc, I = 7.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

1.00

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP3N100ES相关器件

型号	品牌	获取价格	描述	数据表
MTP3N100ET	MOTOROLA	获取价格	3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EU	MOTOROLA	获取价格	3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EU2	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EUA	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EW	MOTOROLA	获取价格	暂无描述
MTP3N100EWC	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N10L	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal
MTP3N12	MOTOROLA	获取价格	3A, 120V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N120E	MOTOROLA	获取价格	TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
MTP3N25E	MOTOROLA	获取价格	TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

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