MTP3N50EAJ

更新时间： 2024-02-26 06:03:20

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摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

3.0 AMPERES

500 VOLTS

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

= 3.0 OHMS

DS(on)

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Low Stored Gate Charge for Efficient Switching

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the

Avalanche Mode

•

Source–to–Drain Diode Recovery Time Comparable to Discrete

Fast Recovery Diode

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

500

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

500

±20

±40

Vdc

Vpk

Gate–Source Voltage — Non–repetitive (t ≤ 50 µs)

GSM

Drain Current — Continuous

Drain Current — Pulsed

3.0

Adc

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.4

Watts

W/°C

Operating and Storage Temperature Range

T , T

–65 to 150

°C

stg

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T < 150°C)

Single Pulse Drain–to–Source Avalanche Energy — T = 25°C

(1)

(2)

210

5.0

DSR

Single Pulse Drain–to–Source Avalanche Energy — T = 100°C

Repetitive Pulse Drain–to–Source Avalanche Energy

DSR

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case°

— Junction to Ambient°

2.5

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

(1) V

= 50 V, I = 3.0 A

(2) Pulse Width and frequency is limited by T (max) and thermal response

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
MTP3N50EC	MOTOROLA	获取价格	暂无描述
MTP3N50ED1	MOTOROLA	获取价格	3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N50EL	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP3N50EN	MOTOROLA	获取价格	3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N50ES	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o
MTP3N50ET	MOTOROLA	获取价格	暂无描述
MTP3N50EU	MOTOROLA	获取价格	暂无描述
MTP3N50EU2	MOTOROLA	获取价格	3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N50EUA	MOTOROLA	获取价格	暂无描述
MTP3N50EW	MOTOROLA	获取价格	3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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