MTP3N100EAJ

更新时间： 2024-11-24 13:11:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	209K
描述
3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP3N100EAJ 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.67
外壳连接：	DRAIN	配置：	SINGLE
最小漏源击穿电压：	1000 V	最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	功耗环境最大值：	75 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

MTP3N100EAJ 数据手册

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by MTP3N100E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

3.0 AMPERES

1000 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 4.0 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

1000

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

± 20

± 40

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

3.0

2.4

9.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

125

1.0

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

245

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 150 Vdc, V = 10 Vdc, I = 7.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

1.00

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP3N100EAJ相关器件

型号	品牌	获取价格	描述	数据表
MTP3N100EC	MOTOROLA	获取价格	暂无描述
MTP3N100ED1	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EN	MOTOROLA	获取价格	3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100ES	MOTOROLA	获取价格	暂无描述
MTP3N100ET	MOTOROLA	获取价格	3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EU	MOTOROLA	获取价格	3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP3N100EU2	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EUA	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-
MTP3N100EW	MOTOROLA	获取价格	暂无描述
MTP3N100EWC	MOTOROLA	获取价格	Power Field-Effect Transistor, 3A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-

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