Datasheet > MTP2P50E_10

MTP2P50E_10

更新时间： 2024-09-09 12:27:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	193K
描述
Power MOSFET 2 Amps, 500 Volts

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MTP2P50E_10 数据手册

MTP2P50E

Power MOSFET

2 Amps, 500 Volts

P−Channel TO−220

This high voltage MOSFET uses an advanced termination scheme

to provide enhanced voltage−blocking capability without degrading

performance over time. In addition, this Power MOSFET is designed

to withstand high energy in the avalanche and commutation modes.

The energy efficient design also offers a drain−to−source diode with a

fast recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

http://onsemi.com

2 AMPERES, 500 VOLTS

R_DS(on)= 6 W

P−Channel

Features

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperature

MARKING DIAGRAM

AND PIN ASSIGNMENT

DSS

DS(on)

• This is a Pb−Free Device*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Drain

Rating

Drain−Source Voltage

Symbol

Value

500

Unit

Vdc

DSS

DGR

Drain−Gate Voltage (R = 1.0 MW)

500

TO−220AB

CASE 221A

STYLE 5

MTP

2P50EG

AYWW

Gate−Source Voltage

− Continuous

Vdc

Vpk

− Non−Repetitive (t ≤ 10 ms)

GSM

Drain Current − Continuous

2.0

1.6

6.0

Adc

Apk

Drain Current − Continuous @ 100°C

Drain Current − Single Pulse (t ≤ 10 ms)

Gate

Source

Total Power Dissipation

Derate above 25°C

0.6

W/°C

Drain

Operating and Storage Temperature Range

T , T

−55 to 150

°C

stg

MTP2P50E = Device Code

Single Pulse Drain−to−Source Avalanche

= Assembly Location

Energy − Starting T = 25°C

= Year

(V = 100 Vdc, V = 10 Vdc,

= Work Week

= Pb−Free Package

I = 4.0 Apk, L = 10 mH, R = 25 W)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

°C/W

°C

1.67

62.5

ORDERING INFORMATION

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 sec

260

Device

MTP2P50EG

Package

Shipping

50 Units/Rail

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

May, 2010 − Rev. 6

MTP2P50E/D

12 3 4 5 6 7

中文翻译

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与MTP2P50E_10相关器件

型号	品牌	获取价格	描述	数据表
MTP2P50EG	ONSEMI	获取价格	Power MOSFET 2 Amps, 500 Volts
MTP2P50L	MOTOROLA	获取价格	2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2P50N	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP2P50S	MOTOROLA	获取价格	2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2P50U	MOTOROLA	获取价格	暂无描述
MTP2P50U2	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP2P50UA	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP2P50W	MOTOROLA	获取价格	2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP2P50WC	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-o
MTP3	VISHAY	获取价格	Three Phase Bridge (Power Module) 45 A to 100 A

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