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MTP2P50EG PDF预览

MTP2P50EG

更新时间： 2024-11-01 12:27:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲高压局域网
页数 文件大小 规格书
7页 193K
描述
Power MOSFET 2 Amps, 500 Volts

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中文翻译

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MTP2P50EG 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：TO-220AB包装说明：LEAD FREE, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：7.63
Samacsys Description：MTP2P50EG P-Channel MOSFET Transistor, 2 A, 500 V, 3-Pin TO-220AB ON Semiconductor其他特性：HIGH VOLTAGE
雪崩能效等级（Eas）：80 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：2 A最大漏极电流 (ID)：2 A
最大漏源导通电阻：6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：75 W最大脉冲漏极电流 (IDM)：6 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

MTP2P50EG 数据手册

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MTP2P50E  
Power MOSFET  
2 Amps, 500 Volts  
P−Channel TO−220  
This high voltage MOSFET uses an advanced termination scheme  
to provide enhanced voltage−blocking capability without degrading  
performance over time. In addition, this Power MOSFET is designed  
to withstand high energy in the avalanche and commutation modes.  
The energy efficient design also offers a drain−to−source diode with a  
fast recovery time. Designed for high voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where  
diode speed and commutating safe operating areas are critical and  
offer additional safety margin against unexpected voltage transients.  
http://onsemi.com  
2 AMPERES, 500 VOLTS  
RDS(on) = 6 W  
P−Channel  
D
Features  
• Robust High Voltage Termination  
• Avalanche Energy Specified  
G
• Source−to−Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
S
• Diode is Characterized for Use in Bridge Circuits  
• I  
and V  
Specified at Elevated Temperature  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
DSS  
DS(on)  
• This is a Pb−Free Device*  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
Drain  
4
C
Rating  
Drain−Source Voltage  
Symbol  
Value  
500  
Unit  
Vdc  
Vdc  
V
DSS  
DGR  
Drain−Gate Voltage (R = 1.0 MW)  
V
V
500  
GS  
TO−220AB  
CASE 221A  
STYLE 5  
MTP  
2P50EG  
AYWW  
Gate−Source Voltage  
− Continuous  
V
GS  
20  
40  
Vdc  
Vpk  
− Non−Repetitive (t ≤ 10 ms)  
p
GSM  
1
Drain Current − Continuous  
I
I
2.0  
1.6  
6.0  
Adc  
Apk  
D
D
2
Drain Current − Continuous @ 100°C  
3
Drain Current − Single Pulse (t ≤ 10 ms)  
I
p
DM  
1
3
Gate  
Source  
Total Power Dissipation  
Derate above 25°C  
P
D
75  
0.6  
W
W/°C  
2
Drain  
Operating and Storage Temperature Range  
T , T  
−55 to 150  
°C  
J
stg  
MTP2P50E = Device Code  
Single Pulse Drain−to−Source Avalanche  
E
AS  
80  
mJ  
A
= Assembly Location  
Energy − Starting T = 25°C  
J
Y
= Year  
(V = 100 Vdc, V = 10 Vdc,  
DD  
GS  
WW  
G
= Work Week  
= Pb−Free Package  
I = 4.0 Apk, L = 10 mH, R = 25 W)  
L
G
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient  
°C/W  
°C  
R
R
1.67  
62.5  
q
JC  
JA  
q
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 sec  
T
260  
L
Device  
MTP2P50EG  
Package  
Shipping  
50 Units/Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 − Rev. 6  
MTP2P50E/D  
1234567

中文翻译

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MTP2P50EG 替代型号

型号 品牌 替代类型 描述 数据表
MTP2P50E ONSEMI

类似代替

 Power MOSFET 2 Amps, 500 Volts
NTE2381 NTE

功能相似

 Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

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