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MSN0603L-SOT23 PDF预览

MSN0603L-SOT23

更新时间: 2024-11-15 01:17:59
品牌 Logo 应用领域
摩矽 - MORESEMI /
页数 文件大小 规格书
6页 433K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN0603L-SOT23 数据手册

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MSN0603L  
60V(D-S) N-ChannelEnhancement Mode Power MOS FET  
General Features  
VDS =60V,ID =3A  
RDS(ON) <105m@ VGS=10V  
RDS(ON) < 125m@ VGS=4.5V  
Lead Free  
High power and current handing capability  
Lead free product is acquired  
Surface mount package  
Application  
Battery switch  
DC/DC converter  
Marking and Pin Assignment  
PIN Configuration  
D
G
S
SOT-23 -3L Top View  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
8 mm  
Quantity  
MSN0603L  
SOT-23-3L  
Ø180mm  
3000 units  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter Symbol  
Limit  
Unit  
Drain-Source Voltage  
60  
V
V
VDS  
VGS  
ID  
Gate-Source Voltage  
±20  
Drain Current-Continuous  
Drain Current-Pulsed (Note 1)  
3
10  
A
A
IDM  
Maximum Power Dissipation  
1.7  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
73.5  
/W  
MORE Semiconductor Company Limited  
http://www.moresemi.com  
1/6  

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