Datasheet > MSN0608W-SOP8

MSN0608W-SOP8

更新时间： 2024-11-15 01:17:59

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	621K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0608W-SOP8 数据手册

MSN0608W

60V(D-S) N-ChannelEnhancement Mode Power MOS FET

General Features

● V_DS= 60V,I_D=8A

R_DS(ON)< 20mΩ @ V_GS=10V (Typ:14.5mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Low gate to drain charge to reduce switching losses

Lead Free

Application

● Power switching application

● Load switch

PIN Configuration

Marking and pin assignment

SOP-8 top view

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0608W

2500 units

MSN0608W

SOP-8

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

5.6

2.1

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

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中文翻译

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