Datasheet > MSN06M2-SOT23

MSN06M2-SOT23

更新时间： 2024-11-15 01:17:59

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	432K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN06M2-SOT23 数据手册

MSN06M2

60V(D-S) N-Channel Enhancement Mode Power MOS FET

General Features

● V_DS= 60V,I_D= 0.115A

R_DS(ON)< 3Ω @ V_GS=5V

R_DS(ON)< 2Ω @ V_GS=10V

● Lead free product is acquired

● Surface mount package

Lead Free

Application

●Direct logic-level interface: TTL/CMOS

●Drivers: relays, solenoids,lamps, hammers,display,

memories, transistors, etc.

●Battery operated systems

●Solid-state relays

Marking and pin assignment

PIN Configuration

SOT-23 top view

Schematic diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø180mm

Tape width

Quantity

MSN06M2

SOT-23

8 mm

3000 units

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

0.115

0.8

I_D

Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}

I_DM

Maximum Power Dissipation

0.2

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

625

℃/W

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

12 3 4 5 6

中文翻译

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