Datasheet > MSN06M3E

MSN06M3E

更新时间： 2024-11-15 01:19:15

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	420K
描述
60V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN06M3E 数据手册

MSN06M3E

60V(D-S) N-Channel Enhancement Mode Power MOS FET

General Features

● V_DS= 60V,I_D= 0.3A

R_DS(ON)< 3Ω @ V_GS=5V

R_DS(ON)< 2Ω @ V_GS=10V

ESD Rating：HBM 2300V

Lead Free

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

● ESD protected

Application

●Direct logic-level interface: TTL/CMOS

●Drivers: relays, solenoids, lamps, hammers,display,

memories, transistors, etc.

Marking and pin assignment

●Battery operated systems

●Solid-state relays

PIN Configuration

Schematic diagram

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø180mm

Tape width

Quantity

MSN06M3E

SOT-23

8 mm

3000 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

0.3

V^GS

T_A=25℃

Continuous Drain Current (T_J=150℃)

I_D

T_A=100℃

0.19

0.8

Drain Current-Pulsed ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

0.35

℃

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

350

℃/W

MORE Semiconductor Company Limited

http://www.moresemi.com

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中文翻译

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